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| IL33153 SINGLE IGBT GATE DRIVER The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dualinline and surface mount packages and include the following features: FEATURES * High Current Output Stage: 1.0 A Source/2.0 A Sink * Protection Circuits for Both Conventional and Sense IGBTs * Programmable Fault Blanking Time * Protection against Overcurrent and Short Circuit * Undervoltage Lockout Optimized for IGBT's * Negative Gate Drive Capability * Cost Effectively Drives Power MOSFETs and Bipolar Transistors BLOCK SCHEME 1 IL33153 ABSOLUTE MAXIMUM RATINGS Rating Power Supply Voltage VCC to VEE Kelvin Ground to VEE (Note 1 ) Logic Input Current Sense Input Blanking/Desaturation Input Gate Drive Output Source Current Sink Current Diode Clamp Current Fault Output Source Current Sink Curent Power Dissipation and Thermal Characteristics D Suffix SO-8 Package, Case 751 Maximum Power Dissipation @ TA = 5OC Thermal Resistance, Junction-to-Air P Suffix DIP-8 Package, Case 626 Maximum Power Dissipation @ TA = 5OC Thermal Resistance, Junction-to-Air Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range Symbol VCC-VEE KGnd - VEE Value Unit V Vin VS VBD IO IFO 20 20 VEE-O,3 to VCC V -0.3 to Vcc V -0.3 to Vcc V A 1.0 2.0 1.0 mA 25 10 PD RJA PD RJA TJ TA Tstg 0.56 180 1.0 100 +150 -40 to +105 -65 to +150 W C/W W C/W C C C 2 IL33153 ELECTRICAL CHARACTERISTICS (Vcc=15V, VEE=0V, Kelvin Gnd connected to VEE. For typical values TA=25C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.) Characteristic Symbol Min Typ Max Unit LOGIC INPUT V Input Threshold Voltage ] 3.2 2.70 High State (Logic 1 ) VIH 2.30 1.2 Low State (Logic 0) VIL Input Current A 500 130 High State (VIH = 3.0 V) IIH 100 50 Low State (Vii. = 1.2 V) IIL DRIVE OUTPUT V Output Voltage 2.5 2.0 Low State (Isink = 1.0 A) VOL 13.9 12 High State (Isource = 500 mA) VOH Output Pull-Down Resistor RPD 100 200 k FAULT OUTPUT V Output voltage 1.0 0.2 Low Slate (Isink = 5.0 mA) VFL 13.3 12 High State (Isource = 20 mA) VFH SWITCHING CHARACTERISTICS ns Propagation Delay (50% Input to 50% Output CL = 1.0 nF) Logic Input to Drive Output Rise 300 80 tPLH(in/out) tPHL Logic Input to Drive Output Fall (in/out) 300 120 Drive Output Rise Time (10% to 90%) CL = 1.0 nF tr 17 55 ns Drive Output Fall Time (90% to 10%) CL= 1.0 nF tf 17 55 ns Propagation Delay s 1.0 0.3 tp(OC) Current Sense Input to Drive Output 1.0 0.3 Fault Blanking/Desaturation Input to Drive Output tp(FLT) UVLO Startup Voltage VSS Start 11.3 12 12.6 V Disable Voltage VSS dis 10.4 11 11.7 V COMPARATORS Overcurrent Threshold Voltage (Vpin8 > 7,0 V) VSOC 50 65 80 mV Short Circuit Threshold Voltage (Vpine8> 7,0 V) VSSC 100 130 160 mV Fault Blanking/Desaturation Threshold (Vpin1 > 100 mV) Vth(FLT) 6.0 6.5 7.0 V Current Sense Input Current (Vsi = 0 V) ISI -1.4 -10 mA FAULT BLANKING/DESATURATION INPUT Current Source (Vpjn8 = 0 V, Vpin4 = 0 V) Ichg -200 -270 -300 mA Discharge Current (Vpin8 = 15 V, Vpin4 = 5.0 V) Idschg 1.0 2.5 mA TOTAL DEVICE mA ICC Power Supply Current 14 7.2 Standby (Vpin 4 = VCC, Output Open) 20 7.9 Operating (CL= 1.0 nF, f= 20 kHz) NOTES: 1. Kelvin Ground must always be between VEE and VCC. 2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. Tlow = -40C lor IL33153 Thigh = +105Clor IL33153 3 |
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